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| PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES * * * * * HIGH fT: 17 GHz TYP at 2 V, 7 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 0.2 1.3 2 1 NE698M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 0.1 1.25 0.1 6 0.2 (All Leads) 5 T1E 3 4 DESCRIPTION The NE698M01 is an NPN high frequency silicon epitaxial transistor (NE686) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE698M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 PIN CONNECTIONS 4. Emitter 1. Emitter 5. Emitter 2. Emitter 6. Collector 3. Base Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT CRE2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 2 V, IC = 7 mA Gain Bandwidth Product at VCE = 2 V, IC=7mA, f = 2.0GHz Feedback Capacitance at VCB = 2 V, IE=0, f=1 MHz Insertion Power Gain at VCE = 2 V, IC = 7 mA, f = 2.0 GHz Noise Figure at VCE = 2 V, IC = 1 mA, f = 2.0 GHz GHz pF dB dB 13 UNITS A A 70 17 0.1 15.5 1.1 1.8 0.15 MIN NE698M01 M01 TYP MAX 0.1 0.1 140 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern Laboratories NE698M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 5 3 2 10 30 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE698M01-T1 ORDER MULTIPLE 3000 PACKAGING Tape & Reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 2 V Total Power Dissipation, PT (mW) Collector Current, Ic (mA) 150 40 40 30 mW 30 30 20 20 10 10 0 50 100 0 0.5 1.0 Ambient Temperature, TA (C) (V) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 500 DC CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, IC (mA) 20 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 5 40 A IB = 20 A 0 1.0 2.0 3.0 10 1 2 5 10 20 30 DC Current Gain, hFE 200 VCE = 2 V 100 15 10 50 VCE = 1 V 20 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) NE698M01 TYPICAL PERFORMANCE CURVES (TA = 25C) GAIN BANDWIDTH PRODUCT vs. Ic CHARACTERISTICS 20 VCE = 2 V f = 2 GHz 18 INSERTION POWER GAIN vs. IC CHARACTERISTICS VCE = 2 V f = 2 GHz Gain Bandwidth Product, fT (GHz) Insertion Power Gain, |S21E|2 (dB) 1 10 20 16 14 12 10 8 6 4 2 0 1 10 0 10 20 Collector Current, Ic (mA) Collector Current, Ic (mA) NOISE FIGURE vs. Ic CHARACTERISTICS 4 0.3 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Noise Figure, NF (dB) 3 Feedback Capacitance, CRE (pF) 20 VCE = 2 V f = 2 GHz 0.2 2 0.1 1 0 1 10 0 1 10 20 Collector Current, Ic (mA) Collector to Base Voltage, VCB (V) INSERTION POWER GAIN vs. FREQUENCY CHARACTERISTICS 40 VCE = 2 V Insertion Power Gain, IS21E|2 (dB) 30 Ic = 7 mA 20 10 Ic = 1 mA 0 0.1 0.5 1.0 2.0 2.6 Frequency, f (GHz) NE698M01 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (GHz) 0.50 1.00 1.50 2.00 2.50 3.00 4.00 5.00 NFOPT (dB) 1.37 1.45 1.56 1.67 1.80 1.95 2.30 2.70 GA (dB) 22 19 16.6 14.6 13.2 12.2 10.9 10.2 OPT MAG 0.61 0.58 0.55 0.51 0.47 0.40 0.34 0.34 ANG Rn/50 27 37 45 53 62 82 159 -134 0.94 0.49 0.67 0.56 0.45 0.34 0.14 0.31 VCE = 2 V, IC = 3 mA TYPICAL OPTIMUM NOISE MATCH (OPT) 1 MINIMUM NOISE FIGURE vs. FREQUENCY 3 Minimum Noise Figure, NFMIN (dB) .5 2 3 2 V, 3 mA 2.5 FMIN dB .2 S11 5 GHz opt 500 MHz 5 2 0 0.2 0.5 1.0 2.0 3.0 0 1.5 500 MHz 5 GHz -.2 -3 -.5 -1 -2 -5 1 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 (2 V, 3 mA) Frequency, f (GHz) NE698M01 TYPICAL SCATTERING PARAMETERS (TA = 25C) VCE = 2 V, Ic = 1 mA FREQUENCY f (MHz) 100 250 400 600 800 1000 1200 1400 1600 1800 2000 2500 3000 3500 4000 4500 5000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.963 0.962 0.953 0.934 0.907 0.874 0.838 0.799 0.758 0.715 0.668 0.587 0.533 0.518 0.532 0.561 0.592 ANG -3.9 -10.0 -16.1 -24.2 -32.4 -40.6 -49.2 -57.6 -66.2 -75.3 -84.6 -107.1 -131.1 -154.4 -175.9 165.6 149.7 MAG 2.863 2.880 2.893 2.886 2.893 2.852 2.823 2.758 2.685 2.629 2.573 2.279 2.035 1.772 1.534 1.324 1.146 S21 ANG 171.7 167.7 161.3 152.6 143.7 134.7 126.0 117.5 108.9 100.5 92.0 72.5 54.6 38.0 23.4 10.7 -0.5 MAG 0.006 0.015 0.024 0.035 0.045 0.054 0.061 0.066 0.070 0.071 0.071 0.063 0.050 0.042 0.052 0.077 0.108 S12 ANG 82.8 80.1 75.5 68.8 61.8 55.1 48.8 42.6 36.6 31.1 26.1 17.7 19.5 38.7 63.3 72.0 71.1 MAG 0.987 0.989 0.984 0.973 0.957 0.938 0.919 0.897 0.875 0.853 0.834 0.797 0.780 0.785 0.800 0.821 0.841 S22 ANG -2.7 -8.2 -13.0 -19.5 -26.0 -32.5 -39.0 -45.5 -52.0 -58.4 -64.7 -80.0 -94.4 -107.6 -119.2 -129.3 -138.1 K 0.21 0.11 0.12 0.16 0.21 0.27 0.31 0.37 0.43 0.50 0.58 0.84 1.23 1.56 1.25 0.83 0.58 MAG1 (dB) 26.7 22.8 20.8 19.2 18.1 17.3 16.7 16.2 15.9 15.7 15.6 15.6 13.2 11.9 11.7 12.3 10.3 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE698M01 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 S11 5 GHz S22 5 GHz j100 90 120 60 150 S12 5 GHz S12 1 GHz S21 5 GHz 30 j10 0 10 25 50 100 S22 1 GHz 0 S11 1 GHz S21 180 1 GHz 0 -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VCE = 2 V, IC = 3 mA) -150 -30 -120 -90 -60 VCE = 2 V, Ic = 3 mA FREQUENCY f (MHz) 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3500 4000 4500 5000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.910 0.903 0.886 0.867 0.844 0.818 0.789 0.758 0.727 0.696 0.632 0.573 0.519 0.465 0.421 0.387 0.355 0.331 0.317 0.309 0.328 0.383 0.451 0.527 ANG -5.49 -12.15 -18.46 -23.84 -29.82 -35.35 -40.72 -46.19 -51.33 -56.23 -66.19 -75.35 -84.27 -93.54 -102.59 -112.30 -122.55 -133.20 -144.52 -156.20 177.03 156.43 142.11 130.35 MAG 7.711 7.507 7.391 7.277 7.211 7.024 6.842 6.679 6.479 6.281 5.923 5.541 5.162 4.858 4.554 4.244 3.999 3.771 3.554 3.363 2.911 2.518 2.167 1.864 S21 ANG 170.42 165.89 159.88 153.86 148.01 142.43 136.76 131.59 126.49 121.67 112.11 103.48 95.39 87.66 80.30 73.46 66.73 60.20 53.94 47.78 33.02 19.22 6.57 -4.78 MAG 0.006 0.012 0.017 0.022 0.027 0.031 0.035 0.038 0.041 0.044 0.047 0.050 0.051 0.051 0.051 0.051 0.051 0.051 0.052 0.054 0.065 0.082 0.104 0.126 S12 ANG 85.31 79.32 74.51 71.17 67.27 63.60 59.99 56.72 53.71 51.05 46.49 43.02 40.54 39.26 38.93 39.56 41.72 44.53 48.11 52.26 60.65 64.68 64.38 61.60 MAG 0.983 0.975 0.962 0.949 0.932 0.913 0.893 0.873 0.853 0.833 0.796 0.763 0.735 0.711 0.692 0.679 0.667 0.659 0.656 0.655 0.668 0.692 0.723 0.737 S22 ANG -4.58 -8.86 -13.10 -17.19 -21.20 -24.97 -28.57 -31.93 -35.20 -38.24 -44.05 -49.33 -54.29 -59.16 -63.82 -68.35 -73.12 -77.85 -82.78 -87.66 -100.67 -113.87 -126.63 -136.90 K 0.15 0.15 0.19 0.21 0.24 0.28 0.33 0.37 0.41 0.45 0.54 0.64 0.74 0.85 0.96 1.06 1.16 1.25 1.30 1.31 1.19 0.98 0.77 0.64 MAG1 (dB) 31.2 28.0 26.3 25.1 24.2 23.5 22.9 22.4 21.9 21.6 21.0 20.5 20.1 19.8 19.5 17.7 16.5 15.7 15.1 14.6 13.9 14.9 13.2 11.7 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE698M01 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 90 120 60 j10 S11 5 GHz 150 S22 5 GHz 25 50 100 30 0 10 S11 1 GHz S22 1 GHz 0 180 S21 1 GHz S12 1 GHz S12 5 GHz 0 -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VCE = 2 V, IC = 5 mA) -150 S21 5 GHz -30 -120 -90 -60 VCE = 2 V, Ic = 5 mA FREQUENCY f (MHz) 100 250 400 600 800 1000 1200 1400 1600 1800 2000 2500 3000 3500 4000 4500 5000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.852 0.828 0.786 0.713 0.629 0.548 0.478 0.415 0.364 0.321 0.289 0.253 0.266 0.305 0.355 0.406 0.451 ANG -6.7 -18.7 -29.4 -42.9 -55.3 -66.7 -77.8 -88.4 -99.1 -110.6 -122.1 -151.7 -177.8 163.3 149.1 138.1 128.3 MAG 11.171 10.993 10.602 9.916 9.125 8.319 7.580 6.906 6.311 5.807 5.355 4.432 3.752 3.214 2.781 2.426 2.135 S21 ANG 169.3 159.7 149.3 136.3 124.3 113.7 104.1 95.6 87.7 80.3 73.5 57.8 43.6 30.5 18.4 7.1 -3.3 MAG 0.006 20.014 0.021 0.029 0.035 0.039 0.042 0.044 0.046 0.047 0.048 0.052 0.060 0.072 0.088 0.108 0.130 S12 ANG 80.8 76.4 69.7 62.0 55.7 51.0 47.9 45.9 44.9 45.2 46.0 51.3 57.1 61.1 62.7 61.9 59.6 MAG 0.969 0.954 0.922 0.871 0.816 0.765 0.722 0.686 0.658 0.636 0.621 0.604 0.610 0.634 0.665 0.701 0.735 S22 ANG -4.3 -12.3 -19.1 -27.3 -34.3 -40.4 -45.9 -50.9 -55.9 -60.8 -65.7 -78.2 -90.8 -103.1 -114.1 -123.7 -132.1 K 0.29 0.21 0.27 0.37 0.48 0.59 0.70 0.82 0.93 1.03 1.12 1.26 1.25 1.12 0.95 0.78 0.63 MAG1 (dB) 32.8 28.9 27.0 25.3 24.1 23.3 22.5 21.9 21.4 19.9 18.4 16.2 15.0 14.4 15.0 13.5 12.2 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE698M01 TYPICAL SCATTERING PARAMETERS (TA = 25C) VCE = 2 V, Ic = 7 mA FREQUENCY f (MHz) 100 250 400 600 800 1000 1200 1400 1600 1800 2000 2500 3000 3500 4000 4500 5000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.803 0.776 0.718 0.629 0.538 0.457 0.388 0.332 0.289 0.255 0.234 0.227 0.258 0.305 0.359 0.408 0.453 ANG -8.4 -22.1 -34.6 -49.7 -63.2 -75.5 -87.6 -99.4 -111.4 -124.4 -137.5 -168.7 168.0 152.0 140.6 131.3 122.8 MAG 14.546 13.446 12.779 11.594 10.364 9.221 8.246 7.407 6.694 6.100 5.591 4.593 3.869 3.304 2.856 2.491 2.191 S21 ANG 168.7 157.1 145.1 131.0 118.7 108.2 98.8 90.6 83.1 76.2 69.7 54.6 40.9 28.2 16.3 5.4 -4.9 MAG 0.006 0.014 0.020 0.027 0.032 0.036 0.038 0.040 0.042 0.044 0.046 0.053 0.064 0.077 0.094 0.114 0.135 S12 ANG 81.2 75.0 67.6 60.5 55.3 51.7 49.9 49.3 49.7 50.9 52.3 57.1 61.1 63.0 63.0 61.2 58.4 MAG 0.965 0.942 0.898 0.834 0.773 0.721 0.679 0.647 0.623 0.606 0.595 0.585 0.598 0.624 0.658 0.695 0.730 S22 ANG -5.5 -13.4 -20.6 -28.6 -35.2 -40.6 -45.5 -50.1 -54.6 -59.3 -64.1 -76.6 -89.6 -102.0 -113.2 -123.0 -131.5 K 0.27 0.25 0.33 0.45 0.58 0.71 0.83 0.95 1.05 1.14 1.20 1.26 1.20 1.07 0.91 0.75 0.62 MAG1 (dB) 34.0 30.0 28.0 26.3 25.1 24.1 23.3 22.7 20.7 19.2 18.1 16.3 15.1 14.7 14.8 13.4 12.1 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -10/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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